ABOUT GERMANIUM

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and afterwards the framework is cycled by means of oxidizing and annealing levels. Because of the preferential oxidation of Si over Ge [sixty eight], the first Si1–Crystallographic-orientation agnostic TiO2-based mostly MIS contacts may